FEI HELIOS 400 Transmission Electron Microscope
The FEI HELIOS 400 is a transmission electron microscope (TEM) manufactured by FEI. It is the flagship product of FEI’s HELIOS series of TEMs and features high resolution, high sensitivity, and high stability.
Key Specifications
- Accelerating voltage: 200 kV
- Detector: High-sensitivity CCD detector
- Resolution: 0.14 nm
- Sensitivity: 10 e-/Å2
- Stability: < 0.1 nm/h
Technical Specifications
- Energy resolution: 20 eV
- Sample thickness: < 100 μm
- Sample size: < 100 mm × 100 mm
Applications
The FEI HELIOS 400 can be used for a variety of materials science and industrial applications, including:
- Basic research: Crystal structure, material defects, surfaces and interfaces, etc.
- Applied research: Nanomaterials, semiconductors, biomedicine, etc.
- Industrial applications: Product analysis, failure diagnosis, quality control, etc.
Specific Applications
Here are some examples of the use of the FEI HELIOS 400 in specific applications:
- Crystal structure research: The FEI HELIOS 400 can be used to study the crystal structure of crystals, including lattice constant, lattice defects, and grain boundaries. For example, it can be used to study the crystal structure of metals, semiconductors, and ceramics.
- Material defect research: The FEI HELIOS 400 can be used to study defects in materials, including grain boundaries, dislocations, and impurities. For example, it can be used to study grain boundary sliding in metal materials and defect states in semiconductor materials.
- Surface and interface research: The FEI HELIOS 400 can be used to study the surfaces and interfaces of materials, including morphology, structure, and chemical composition. For example, it can be used to study surface corrosion of metal materials and interface contact of semiconductor materials.
- Nanomaterials research: The FEI HELIOS 400 can be used to study the structure and properties of nanomaterials. For example, it can be used to study carbon nanotubes, graphene, and nanocrystals.
- Semiconductor research: The FEI HELIOS 400 can be used to study the structure, defects, and properties of semiconductor materials. For example, it can be used to study the manufacturing process of semiconductor devices and failure diagnosis.
- Biomedical research: The FEI HELIOS 400 can be used to study the structure and function of biological samples. For example, it can be used to study the structure and function of cells, tissues, and organs.
- Product analysis: The FEI HELIOS 400 can be used to analyze the structure and defects of products. For example, it can be used to analyze the weld joints of metal materials and defects in semiconductor devices.
- Failure diagnosis: The FEI HELIOS 400 can be used to diagnose product failures. For example, it can be used to diagnose fractures in metal materials and damage to semiconductor devices.
- Quality control: The FEI HELIOS 400 can be used to control the quality of products. For example, it can be used to control the surface quality of metal materials and the dimensions of semiconductor devices.
The FEI HELIOS 400 is a powerful TEM that can be used for a variety of materials science and industrial applications. It features high resolution, high sensitivity, and high stability, making it a versatile tool that can meet the needs of a wide range of applications.
FEI HELIOS 400 是一种聚焦离子束扫描电子显微镜 (FIB-SEM)，它可以利用高能镓离子束和场发射电子束对材料进行精密的成像、分析、加工和制备。它主要用于材料科学、半导体、生命科学等领域的研究和应用。根据我搜索到的信息，FEI HELIOS 400 的主要设备指标和用途有以下几点：
电子束分辨率：在最佳工作距离下，二次电子成像分辨率为 0.6 nm @ 2 kV，1.0 nm @ 1 kV；在双束交叉点处，二次电子成像分辨率为 0.6 nm @ 15 kV，0.9 nm @ 5 kV，1.2 nm @ 1 kV1。
离子束分辨率：在双束交叉点处，使用单边测量法为 2.5 nm @ 30 kV，使用统计测量法为 4.0 nm @ 30 kV1。
电子束着陆电压：20 V – 30 kV1。
离子束加速电压：500 V – 30 kV1。
离子束束流强度：0.1 pA – 65 nA1。
沉积和刻蚀辅助材料：Pt、C、TEOS、W、XeF21。
配备有纳米机械手、防样品被空气氧化的传输装置、纳米原型设计软件、多种探测器和可控的样品台等附件12。
主要功能和服务范围：二次电子、背散射电子以及镓离子成像；三维重构和数据分析；TEM样品的制备；半导体元器件、集成电路的修补和失效分析；EDS能谱分析（点、线、面）